| Image | Product | Manufacturer | Description | History Price | Availability | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | FET Feature | FET Type | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Operating Temperature | Package / Case | Part Status | Power - Max | Rds On (Max) @ Id, Vgs | Supplier Device Package | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FDR8702H | Rochester Electronics | SMALL SIGNAL P-CHANNEL MOSFET |
| 254,870 | 3.6A, 2.6A | 20V | Logic Level Gate | N and P-Channel | 10nC @ 4.5V | 650pF @ 10V | Surface Mount | -55°C ~ 150°C (TJ) | 8-LSOP (0.130", 3.30mm Width) | Obsolete | 800mW | 38mOhm @ 3.6A, 4.5V | SuperSOT™-8 | 1.5V @ 250µA | |
| MIC4424CWMTR | Rochester Electronics | DUAL 3A-PEAK LOW-SIDE MOSFET DRI |
| 13,000 | - | - | - | - | - | - | - | - | - | Active | - | - | - | - | |
| FSS133-TL-E | Rochester Electronics | P-CHANNEL SILICON MOSFET |
| 17,000 | - | - | - | - | - | - | - | - | - | Active | - | - | - | - | |
| ISL6605CB-TS2495 | Rochester Electronics | HALF BRIDGE BASED MOSFET DRIVER, |
| 2,500 | - | - | - | - | - | - | - | - | - | Active | - | - | - | - | |
| FDS8926A | Rochester Electronics | N-CHANNEL POWER MOSFET |
| 22,067 | 5.5A | 30V | Logic Level Gate | 2 N-Channel (Dual) | 28nC @ 4.5V | 900pF @ 10V | Surface Mount | -55°C ~ 150°C (TJ) | 8-SOIC (0.154", 3.90mm Width) | Obsolete | 900mW | 30mOhm @ 5.5A, 4.5V | 8-SOIC | 1V @ 250µA | |
| FDW2510NZ | Rochester Electronics | N-CHANNEL POWER MOSFET |
| 19,149 | 6.4A | 20V | Logic Level Gate | 2 N-Channel (Dual) | 12nC @ 4.5V | 870pF @ 10V | Surface Mount | -55°C ~ 150°C (TJ) | 8-TSSOP (0.173", 4.40mm Width) | Obsolete | 1.1W | 24mOhm @ 6.4A, 4.5V | 8-TSSOP | 1.5V @ 250µA | |
| NDS8936 | Rochester Electronics | N-CHANNEL POWER MOSFET |
| 9,342 | 5.3A | 30V | Logic Level Gate | 2 N-Channel (Dual) | 30nC @ 10V | 720pF @ 15V | Surface Mount | -55°C ~ 150°C (TJ) | 8-SOIC (0.154", 3.90mm Width) | Obsolete | 900mW | 35mOhm @ 5.3A, 10V | 8-SOIC | 2.8V @ 250µA | |
| FDU6670AS | Rochester Electronics | TRANS MOSFET N-CH 30V 3PIN(3+TAB |
| 3,585 | - | - | - | - | - | - | - | - | - | Active | - | - | - | - | |
| FDS4885C | Rochester Electronics | P-CHANNEL POWER MOSFET |
| 1,716 | 7.5A, 6A | 40V | Standard | N and P-Channel | 21nC @ 10V | 900pF @ 20V | Surface Mount | -55°C ~ 150°C (TJ) | 8-SOIC (0.154", 3.90mm Width) | Obsolete | 900mW | 22mOhm @ 7.5A, 10V | 8-SOIC | 5V @ 250µA | |
| UPA1872BGR-9JG-E1-A | Rochester Electronics | POWER, 10A, 20V, N-CH MOSFET |
| 231,000 | 10A | 20V | Logic Level Gate | 2 N-Channel (Dual) | 10nC @ 4V | 945pF @ 10V | Surface Mount | - | 8-TSSOP (0.173", 4.40mm Width) | Obsolete | 2W | 13mOhm @ 5A, 4.5V | 8-TSSOP | 1.5V @ 1mA | |
| UPA1874BGR-9JG-E1-A | Rochester Electronics | POWER, 8A, 30V, N-CHANNEL MOSFET |
| 6,000 | 8A | 30V | Logic Level Gate | 2 N-Channel (Dual) | 10nC @ 4V | 930pF @ 10V | Surface Mount | - | 8-TSSOP (0.173", 4.40mm Width) | Obsolete | 2W | 14mOhm @ 4A, 4.5V | 8-TSSOP | 1.5V @ 1mA | |
| IRF740S2515 | Rochester Electronics | 10A, 400V, 0.55OHM, N-CHANNEL, P |
| 2,800 | - | - | - | - | - | - | - | - | - | Active | - | - | - | - | |
| FDPF9N50NZ-FS | Rochester Electronics | 500V N-CHANNEL UNIFET2 MOSFET |
| 2,000 | - | - | - | - | - | - | - | - | - | Active | - | - | - | - | |
| RF1S30N06LE | Rochester Electronics | 30A, 60V, 0.047OHM, N-CHANNEL, |
| 1,848 | - | - | - | - | - | - | - | - | - | Active | - | - | - | - | |
| BB305CEW-TL-E | Rochester Electronics | RF N |
| 42,000 | - | - | - | - | - | - | - | - | - | Active | - | - | - | - | |
| LM2724MX/NOPB | Rochester Electronics | HIGH SPEED 3A SYNCHRONOUS MOSFE |
| 50,000 | - | - | - | - | - | - | - | - | - | Active | - | - | - | - | |
| IPA126N10N3G | Rochester Electronics | 35A, 100V, 0.0126OHM, N-CHANNEL |
| 1,450 | - | - | - | - | - | - | - | - | - | Active | - | - | - | - | |
| 2SK2631-TL-E-ON | Rochester Electronics | POWER MOSFET |
| 16,100 | - | - | - | - | - | - | - | - | - | Active | - | - | - | - | |
| FDQ7238AS | Rochester Electronics | N-CHANNEL POWER MOSFET |
| 645,908 | 14A, 11A | 30V | Logic Level Gate | 2 N-Channel (Dual) | 24nC @ 10V | 920pF @ 15V | Surface Mount | -55°C ~ 150°C (TJ) | 14-SOIC (0.154", 3.90mm Width) | Obsolete | 1.3W, 1.1W | 13.2mOhm @ 11A, 10V | 14-SOIC | 3V @ 250µA | |
| FDMS3616S | Rochester Electronics | SMALL SIGNAL N-CHANNEL MOSFET |
| 65,810 | 16A, 18A | 25V | Logic Level Gate | 2 N-Channel (Dual) Asymmetrical | 27nC @ 10V | 1765pF @ 13V | Surface Mount | - | 8-PowerTDFN | Obsolete | 1W | 6.6mOhm @ 16A, 10V | Power56 | 2.5V @ 250µA | |
| FW274-TL-E | Rochester Electronics | N-CHANNEL MOSFET |
| 15,000 | 6A (Ta) | 30V | Logic Level Gate, 4V Drive | 2 N-Channel (Dual) | 9.1nC @ 10V | 490pF @ 10V | Surface Mount | 150°C | 8-SOIC (0.173", 4.40mm Width) | Obsolete | 2.2W (Ta) | 37mOhm @ 6A, 10V | 8-SOP | 2.6V @ 1mA | |
| FW803-TL-E | Rochester Electronics | N-CHANNEL SILICON MOSFET |
| 10,000 | - | - | - | - | - | - | - | - | - | Active | - | - | - | - | |
| HAT2218R-EL-E | Rochester Electronics | POWER, 7.5A, 30V, N-CH MOSFET |
| 3,981 | 7.5A, 8A | 30V | Logic Level Gate, 4.5V Drive | 2 N-Channel (Dual) Asymmetrical | 4.6nC @ 4.5V | 630pF @ 10V | Surface Mount | 150°C (TJ) | 8-SOIC (0.154", 3.90mm Width) | Obsolete | 1.5W | 24mOhm @ 3.75A, 10V | 8-SOP | - | |
| ISL6594ACRZ-TR5212 | Rochester Electronics | HALF BRIDGE BASED MOSFET DRIVER, |
| 6,000 | - | - | - | - | - | - | - | - | - | Active | - | - | - | - | |
| RFD20N03SM9AR4770 | Rochester Electronics | 20A, 30V, 0.025 OHM, N-CHANNEL |
| 1,578 | - | - | - | - | - | - | - | - | - | Active | - | - | - | - |
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